inchange semiconductor isc product specification isc silicon pnp power transistor 2SB1217 description high collector current -i c = -3a collector-emitter breakdown voltage- : v (br)ceo = -60v(min) good linearity of h fe low saturation voltage complement to type 2sd1818 applications designed for use in dc-dc converter, driver, solenid and motor . absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -7 v i c collector current-continuous -3 a i cp collector current-pulse -5 a i b b base current-continuous -0.5 a collector power dissipation @ t c =25 10 p c collector power dissipation @ t a =25 1.3 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB1217 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce( sat ) collector-emitter saturation voltage i c = -1.5a; i b = -0.15a b -0.3 v v be( sat ) base-emitter saturation voltage i c = -1.5a; i b = -0.15a b -1.2 v i cbo collector cutoff current v cb = -60v; i e = 0 -10 a i ebo emitter cutoff current v eb = -7v; i c = 0 -10 a h fe-1 dc current gain i c = -0.2a ; v ce = -2v 60 h fe-2 dc current gain i c = -0.6a ; v ce = -2v 100 400 h fe-3 dc current gain i c = -2.0a ; v ce = -2v 50 switching times t on turn-on time 0.5 s t stg storage time 2.0 s t f fall time i c = -1.0a; i b1 = -i b2 = -0.1a; r l = 10 ; v cc -10v 0.5 s ? h fe- 2 classifications m l k 100-200 160-320 200-400 isc website www.iscsemi.cn 2
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